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Ordering number : ENA1006
SCH2825
SANYO Semiconductors
DATA SHEET
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
SCH2825
Features
* *
General-Purpose Switching Device Applications
*
Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit 30 20 1.6 6.4 0.6 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : XA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1207PE TI IM TC-00001031 No. A1006-1/6
SCH2825
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.42 13 10 0.48 120 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A IS=1.6A, VGS=0V 30 1 10 1.2 0.6 1.0 135 230 88 19 11 3.4 3.5 10.6 4.0 2.0 0.33 0.29 0.82 1.2 180 330 2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions
unit : mm (typ) 7028-003
Electrical Connection
6
1.6
5
4
0.05
0.2 654
0.2
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain
Top view
1.6
1.5
1 0.05
1 2 3 0.5
2
3
0.56 0.25
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6
No. A1006-2/6
SCH2825
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
VIN 10V 0V VIN
VDD=15V
Duty10%
100mA
ID=800mA RL=18.75
D
PW=10s D.C.1%
VOUT
G
--5V trr
SCH2825 P.G 50
S
1.8
ID -- VDS
6.0V
[MOSFET]
2.0
ID -- VGS
VDS=10V
100mA
10s
50
100
10
4.0
V
1.6 1.4
1.8 1.6
Drain Current, ID -- A
8.0V
Drain Current, ID -- A
1.2 1.0 0.8 0.6 0.4 0.2 0 0
10.0V
1.4 1.2 1.0 0.8 0.6
15.0V
3.5V
VGS=2.5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.2 0 0 0.5 1.0 1.5
2.0
2.5
--25 C
3.0V
Ta= 7
0.4
5C
25 C
3.0
10mA
[MOSFET]
3.5
4.0
390
Drain-to-Source Voltage, VDS -- V IT13107 RDS(on) -- VGS [MOSFET] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
390 360 330 300 270 240 210 180 150 120 90 60 --60 --40
Gate-to-Source Voltage, VGS -- V IT13108 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
360 330 300 270 240 210 180 150 120 90 0 2 4 6 8 10 12 14 16
ID=0.4A 0.8A
0. I D= 4V, = V GS
4A
, I D= =10V VGS
0.8A
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT13131
Ambient Temperature, Ta -- C
IT13132
No. A1006-3/6
SCH2825
3
yfs -- ID
[MOSFET]
Forward Transfer Admittance, yfs -- S
2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 0.001
VDS=10V
3 2 1.0 7 5
IS -- VSD
[MOSFET]
VGS=0V
Source Current, IS -- A
C 25
3 2 0.01 7 5 3 2
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Drain Current, ID -- A
5 3
5 7 1.0 IT13111
0.001 0.2
0.4
Ta= --25 C 25C 75C
0.6 0.8
= Ta
--2
C 5
3 2 0.1 7 5
75
C
1.0
1.2
SW Time -- ID
[MOSFET]
VDD=15V VGS=10V
3 2
Diode Forward Voltage, VSD -- V IT13112 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
2
100 7 5 3 2
Ciss
td(off)
10 7 5
td(on)
3 2
tf
tr
Coss
Crss
10 7
1.0 0.1
5 2 3 5 7 1.0 2 3 5 IT13113 0 5 10 15 20 25 30
Drain Current, ID -- A
10 9
VGS -- Qg
[MOSFET]
2 10 7 5
IT13114 Drain-to-Source Voltage, VDS -- V ASO [MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.6A
IDP=6.4A ID=1.6A
DC
10
8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain Current, ID -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
PW10s 10 0 1m s s
m s
op
er
10
ati on
0m
s
25
(T a=
Operation in this area is limited by RDS(on).
C )
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
Total Gate Charge, Qg -- nC
0.7
IT13133
PD -- Ta
M
Drain-to-Source Voltage, VDS -- V
IT13134
[MOSFET]
Allowable Power Dissipation, PD -- W
0.6
ou
0.5
nt
ed
on
ac
0.4
er
am
ic
bo
0.3
ar
d
(9
00
m
0.2
m2
0.
8m
m
0.1 0 0 20 40 60 80 100 120
)1
un
it
160
140
Ambient Temperature, Ta -- C
IT13135
No. A1006-4/6
SCH2825
1.0 7 5
IF -- VF
[SBD]
100000 7 5 3 2
IR -- VR
C
[SBD]
3 2
Reverse Current, IR -- A
Forward Current, IF -- A
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0
5 Ta=12
100C
75C
0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 IT07927
50C
25C
25 C 100 C 75C 50C 25C
Ta= 1
5
10
15
20
25
30 IT07928
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.35
PF(AV) -- IO
(1)
Reverse Voltage, VR -- V
100 7
[SBD]
C -- VR
[SBD]
Rectangular wave
0.25 360
f=1MHz
Interterminal Capacitance, C -- pF
0.6
0.30
(2) (4) (3)
5
Sine wave
0.20 180 0.15 360
3 2
10 7 5 3 0.1
0.10
0.05 0 0 0.1 0.2
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180
0.3 0.4 0.5
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Average Output Current, IO -- A
3.5
IT08187
IFSM -- t
IS
Reverse Voltage, VR -- V
IT07891
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
3.0
2.5
20ms t
2.0
1.5
1.0
0.5 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00338
No. A1006-5/6
SCH2825
Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice.
PS No. A1006-6/6

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